CN1518769A - 闸流体结构及具此闸流体结构之过电压保护装置 - Google Patents

闸流体结构及具此闸流体结构之过电压保护装置 Download PDF

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CN1518769A
CN1518769A CNA028062485A CN02806248A CN1518769A CN 1518769 A CN1518769 A CN 1518769A CN A028062485 A CNA028062485 A CN A028062485A CN 02806248 A CN02806248 A CN 02806248A CN 1518769 A CN1518769 A CN 1518769A
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zone
area
thyristor
overvoltage protection
conductivity
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CN1295787C (zh
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C・彼德斯
C·彼德斯
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Abstract

本发明系关于一闸流体结构，包括一第一连接(1)，用以做为一第一导电型态之一第一区域。第二导电型态之一第二区域(2)邻近该第一区域(1)。第一导电型态之一第三区域(3)，其比第二区域(2)宽，具有与后者之一共同表面。做为一第四区域之第二导电型态之一第二连接(4)邻近该第三区域。一辅助电极(6，7)位于该第二区域(2)与该第三区域(3)之该共同区域上，该电极于该二区域之至少一者相接邻。

Description

闸流体结构及具此闸流体结构之过电压保护装置
本发明系关于闸流体结构及依据申请专利范围第1至4项之过电压保护装置。
现今具有平面结构之闸流体结构于使用CMOS技术时是平常的。一种典型的闸流体结构表示于图三。在此一组件的表面上设置相邻的一n-型态区域2以及一p-型态区域3，该等区域也形成所谓的闸流体结构的基体区域。代表阳极端的p+区域1被形成于n-型区域2之中。形成于p-型区域3之中的n+型区域4代表阴极端。形成于p-型区域3之中的p+型区域5接着形成控制端。
在以上所述之结构的制程中，一厘的氮化物层被施加于表面8之上。该硅氮化物层中的电荷导致寄生场效应。如果于制程中在表面8，于区域2及3中包含污染务，则可能发生相同的效应。
以上所述之闸流体结构经常被使用于称为ESD的过电压保护设计。ESD保护通常被用于集成电路的MOS输入级。过电压侦测器被设置于将被保护的集成电路的部份，该过电压侦测器连接于该闸流体之控制端。此型态的设计描述于US 4,896,243。
闸流体的阳极及阴极依序连接至将被保护之组件的供应电源，如果供应电源将被监视的话。
如果随后发生过电压，闸流体经由控制端被开启且此过电压被移除。
如果如上所述之寄生场效应晶体管形成，被监视的电压被短路，其导致将被保护的组件整个失效。
US 5,907,462及US 5,465,189揭示藉由一场效结构控制之ESD结构。
本发明系基于以可避免寄生效应干扰之方式发展闸流体结构及具有此闸流体结构之过电压保护装置为目的。
此目的系依据本发明藉由所附申请专利范围所指定之方法而达成。
藉由在第二及第三区域之一的一表面上形成至少一辅助电极，可以将辅助电极区域中之该表面放入一预定电荷状态。
具有此种闸流体结构之过电压保护设计不会导致将被保护之组件因寄生效应而失效。
本发明之其它有利的改善被指定于申请专利范围附属项。
藉由在第二及第三区域提供一辅助电极及以并连接第二区域上之辅助电极至第一端以及连接位于第三区域之辅助电极至第二端，可以简单的方式产生该预定电荷状态。
藉由以多晶硅形成之辅助电极及形成隔离第二与第三区域之闸极氧化物，该辅助电极可以使用一般的方法以简单的方式被产生。
藉由将过电压保护装置集积于半导体芯片上，可以简单地及有效率地产生过电压保护。
本发明使用例示实施例参考所附图式而被解释如下：
在图式中：
第一图表示依据本发明之闸流体结构；
第二图表示本发明过电压保护装置之基本图；
第三图表示一般的闸流体结构。
图一表示依据本发明之闸流体结构，其原则上对应引言中已参照图三之描述。于本例中，相同的部份被提供相同的标号。
在所示之例示实施例中，互相隔离的辅助电极被额外形成于闸流体之第二区域2与第三区域3，其亦被称为闸流体之基体，之共同表面上。此等辅助电极系由一闸极氧化物6，一般用以产生场效晶体管，以及以多晶硅制成之一电极接触7。形成于表面区域2之表面上的辅助电极导电连接于第一端1，该阳极电极。形成于区域3的辅助电极导电连接于第二端，该阴极端。这确保将产生于第一端1与第二端3之间的短路的导电信道不会因为寄生效应而在基体区域内产生。此闸流体结构仅由施加于控制端5之电流导通。
图二表示过电压设计中之闸流体结构。以上所述的闸流体结构由其阳极及阴极端，亦即第一端1及第二端3连接至将被保护之组件11之供应电压VDD及VSS。当过电压发生时，过电压保护侦测装置13经由控制端5施加一电流至闸流体结构之基体区域内，称为第三区域3。后者触发并将供应电压短路。
此设计尤其适合于集积化。这表示闸流体结构与被侦测组件之表面上之过电压侦测器以及二辅助电极集积在一起，避免闸流体被设置于一薄氧化物之下的情况，以避免寄生效应。因此，闸流体结构的行为可完全被维持。
此外，此种设计可以应用于其它电压监视的情况，例如信号输入的电压。

Claims (6)

1.一种闸流体结构，具有：
一第一端(1)被形成做为一第一区域，具有一第一导电形态；
第二导电型态之一第二区域(2)，其邻近该第一区域(1)；
第一导电型态之一第三导电区域(3)，其邻近该第二区域(2)并与后者具有一共同表面(8)，以及
一第二端(4)，做为第二导电型态之第四区域，邻近该第三区域，
于该情况中，该第二区域(2)及该第三区域(3)之共同表面处，一辅助电极(6，7)以邻近该二区域之至少一者的方式设置，特征在于一辅助电极(6，7)以位于第二区域(2)与第三区域(3)之共同表面(8)之上的方式邻近该第二区域(2)及该第三区域(3)。
2.如申请专利范围第1项之闸流体结构，特征在于该辅助电极(6，7)系从由多晶硅制成之一导电区域(7)以及隔离该导电区域(7)与该共同表面(8)之一辅助氧化物所形成。
3.一种过电压保护装置，具有依据申请专利范围第1或2项之闸流体结构，其中一将被保护的组件(5)以导电连接的方式设置于该第一端(1)与该第二端(2)之间，而该第二或第三区域(3)具有一控制端(5)用以连接侦测跨越被保护之该组件之一过电压之一过电压侦测器。
4.如申请专利范围第3项之过电压保护装置，特征在于该控制端(5)系导电型态与其所在之区域相同之一区域，并其导电性比该区域高。
5.如申请专利范围第3或4项之过电压保护装置，特征在于该被保护之组件之供应电压(VDD，VSS)系连接于该第一端(1)及该第二端(4)。
6.如申请专利范围第3、4或5项之过电压保护装置，特征在于该过电压保护装置系以集积之方式被设置于一单一半导体芯片上。
CNB028062485A 2001-03-09 2002-02-15 闸流体结构及具有该闸流体结构的过电压保护装置 Expired - Fee Related CN1295787C (zh)

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DE10111462A DE10111462A1 (de) 2001-03-09 2001-03-09 Thyristorstruktur und Überspannungsschutzanordnung mit einer solchen Thyristorstruktur
DE10111462.1 2001-03-09

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DE10111462A1 (de) 2002-09-19
JP2004528709A (ja) 2004-09-16
EP1399968A2 (de) 2004-03-24
CN1295787C (zh) 2007-01-17
EP1399968B1 (de) 2012-11-28
TW548846B (en) 2003-08-21
US7205581B2 (en) 2007-04-17
JP4139688B2 (ja) 2008-08-27
US20040046181A1 (en) 2004-03-11
WO2002073695A2 (de) 2002-09-19

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